document number: 94652 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 10-dec-08 1 high performance schottky generation 5.0, 2 x 20 a MBR40H100WT-F vishay high power products features ? 175 c high performance schottky diode ? very low forward voltage drop ? extremely low reverse leakage ? optimized v f vs. i r trade off for high efficiency ? increased ruggedness for reverse avalanche capability ? rbsoa available ? negligible switching losses ? submicron trench technology ? fully lead (pb)-free and rohs compliant devices ? designed and qualified for industrial level applications ? high efficiency smps ? automotive ? high frequency switching ? output rectification ? reverse battery protection ? freewheeling ? dc-to-dc systems ? increased power density systems product summary i f(av) 2 x 20 a v r 100 v maximum v f at 20 a at 125 c 0.67 v to-247ac anode 13 2 base common cathode 4 common cathode anode major ratings and characteristics symbol characteristics values units v rrm 100 v v f 20 apk, t j = 125 c (typical, per leg) 0.63 t j range - 55 to 175 c voltage ratings parameter symbol test conditions MBR40H100WT-F units maximum dc reverse voltage v r t j = 25 c 100 v absolute maximum ratings parameter symbol test conditions values units maximum average forward current per leg i f(av) 50 % duty cycle at t c = 144 c, rectangular waveform 20 a per device 40 maximum peak one cycle non-repetitive surge current i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied 600 10 ms sine or 6 ms rect. pulse 200 non-repetitive avalanche energy e as t j = 25 c, i as = 1.5 a, l = 60 mh 67.5 mj repetitive avalanche current i ar limited by frequency of operation and time pulse duration so that t j < t j max. i as at t j max. as a function of time pulse see fig. 8 i as at t j max. a
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 94652 2 revision: 10-dec-08 MBR40H100WT-F vishay high power products high performance schottky generation 5.0, 2 x 20 a note (1) pulse width < 300 s, duty cycle < 2 % electrical specifications parameter symbol test conditions typ. max. units forward voltage drop per leg v fm (1) 20 a t j = 25 c 0.72 0.8 v 40 a 0.85 0.9 20 a t j = 125 c 0.63 0.67 40 a 0.74 0.77 reverse leakage current per leg i rm (1) t j = 25 c v r = rated v r 1.2 50 a t j = 125 c 2.5 6 ma junction capacitance per leg c t v r = 5 v dc (test signal range 100 khz to 1 mhz), 25 c 850 - pf series inductance l s measured lead to lead 5 mm from package body 8 - nh maximum voltage rate of change dv/dt rated v r - 10 000 v/s thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 55 to 175 c maximum thermal resistance, junction to case per leg r thjc dc operation 2 c/w maximum thermal resistance, junction to case per device 1 typical thermal resistance, case to heatsink r thcs 0.24 approximate weight 6g 0.21 oz. mounting torque minimum 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case styl e to-247ac mbr40h100wt
document number: 94652 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 10-dec-08 3 MBR40H100WT-F high performance schottky generation 5.0, 2 x 20 a vishay high power products fig. 1 - maximum forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics forward voltage drop - v fm (v) instantaneous forward current - i f (a) 0.20.40.60.81.01.21.41.6 1 10 100 tj = 25c tj = 125c tj = 175c reverse current - i r (ma) reverse voltage - v r (v) 020406080100 0.0001 0.001 0.01 0.1 1 10 100 75c 100c 50c 125c 150c 175c 25c reverse voltage - v r (v) junction capacitance - c t (pf) 0 20 40 60 80 100 100 1000 t 1 , rectangular pulse duration (seconds) thermal impedance z thjc (c/w) 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 0.01 0.1 1 10 single pulse (thermal resistance) d = 0.2 d = 0.25 d = 0.33 d = 0.5 d = 0.75
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 94652 4 revision: 10-dec-08 MBR40H100WT-F vishay high power products high performance schottky generation 5.0, 2 x 20 a fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward powe r loss characteristics fig. 7 - maximum non-repetitive surge current note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 80 % rated v r average forward current - i f (av) (a) allowable case temperature (c) 0 5 10 15 20 25 30 80 90 100 110 120 130 140 150 160 170 180 dc square wave (d=0.50) 80% rated vr applied see note (1) average forward current - i f (av) (a) average power loss (watts) 0 5 10 15 20 25 30 0 5 10 15 20 180 120 90 60 30 dc rms limit square wave pulse duration - t p (microsec) non-repetitive surge current - i fsm (a) 10 100 1000 10000 100 1000
document number: 94652 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 10-dec-08 5 MBR40H100WT-F high performance schottky generation 5.0, 2 x 20 a vishay high power products fig. 8 - reverse bias safe operating area (avalanche current vs. rectangular pulse duration) fig. 9 - reverse bias safe operating area (avalanche energy vs. re ctangular pulse duration) 0 0 1 0 1 1 1 10 100 1000 tj = 25c tj = 125c tj = 175c rectangular pulse duration ( sec) avalanche current (a) 0 0 1 0 1 1 1 10 100 1000 tj = 25c tj = 125c tj = 175c rectangular pulse duration ( sec) avalanche energy (mj)
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 94652 6 revision: 10-dec-08 MBR40H100WT-F vishay high power products high performance schottky generation 5.0, 2 x 20 a ordering information table 1 - schottky mbr series 2 - current rating (40 = 40 a) 3 - h = high temperature 4 - voltage code (100 v) 5 - wt = circuit configuration: center tap (dual) to-247 6 - f = rohs compliant and fully lead (pb)-free device code 5 13 24 6 mbr 40 h 100 wt - f links to related documents dimensions http://www.vishay.com/doc?95223 part marking information http://www.vishay.com/doc?95007
outline dimensions www.vishay.com vishay semiconductors revision: 16-jun-11 1 document number: 95223 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters and inches notes (1) dimensioning and tolera ncing per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish uncontrolled in l1 (6) ? p to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jede c outline to-247 with ex ception of dimension c symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.30 0.020 0.051 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.50 2.49 0.059 0.098 e1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 fk 2.54 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.37 0.065 0.094 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.86 0.015 0.034 ? p1 - 6.98 - 0.275 c1 0.38 0.76 0.015 0.030 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 1.78 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc 0.10 a c m m e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c ? k b d m m a (6) ? p (datum b) fp1 d1 (4) 4 e1 0.01 b d m m view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) planting lead assignments diodes 1. - anode/open 2. - cathode 3. - anode
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